Tailoring the oxygen distribution in 300 mm Czochralski crystal of pure silicon using cusp magnetic field (Q614232)

Summary: Oxygen content in the pure Silicon crystal is inevitable because of the significant rate of corrosion of the crucible walls at high temperature. Precise control of oxygen is possible only by manipulating underlying flow. A global model was developed to investigate the effect of crystal and crucible rotations in absence and presence of the Electromagnetic Fields (EMs) on melt flow. The simulation results show that strong buoyancy driven flow interaction generates non-uniformity in oxygen concentration near the edge of the crystal in the absence of magnetic field. Application of external field facilitates more pumping of melt underneath the crystal that prevents stratification of oxygen near the edge.