Electron shuttling model

quantum dynamical model of an electron to be shuttled in a Si/SiGe quantum bus.

Community: MathModDB

dynamic model

mathematical model

Available identifiers

MaRDI QIDQ6534342FDOQ6534342

The clavier gate electrodes on the top surface generate a moving array of QD potentials.

Top view on the Si-QuBus with the four different clavier gate sets highlighted in color.

Description (long)

Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.

Contained entities

time-dependent Schrödinger equation for electric charges	$\mathrm{i}\hslash \frac{\partial }{\partial t}|\psi (t)⟩=\hat{H}|\psi (t)⟩$	governing equation
	$H$ represents quantum Hamiltonian (electric charge)
	$\hslash$ represents reduced Planck constant
	$\psi (t)$ represents quantum state vector (dynamic)
	$t$ represents time
	$\mathrm{i}$ represents imaginary unit
Dirichlet boundary condition for electric potential	$\varphi (r,t){|}_{{\Gamma }_k}={\psi }_0+U_k(t)$	boundary condition
	$U_k$ represents applied external voltage
	${\Gamma }_k$ represents electrode interfaces
	$\varphi$ represents electric potential
	$t$ represents time
time-independent Schrödinger equation for electric charges	$\hat{H}|{\psi }_n⟩=E_n|{\psi }_n⟩$	governing equation
	$H$ represents quantum Hamiltonian (electric charge)
	$E_n$ represents quantum eigen energy
	${\psi }_n$ represents quantum state vector (stationary)
	$n$ represents quantum number
Lindblad equation	$\frac{\mathrm{d}}{\mathrm{d}t}\rho =-\frac{\mathrm{i}}{\hslash }[H,\rho ]+\sum _{k=1}^{N^2-1}{\gamma }_k(L_k\rho L_k^{†}-\frac{1}{2}[L_k^{†}{L}_k,\rho {]}_{+})$	governing equation
	$H$ represents Hamiltonian operator
	$L$ represents jump operator
	$\gamma >0$ represents quantum damping rate
	$\hslash$ represents reduced Planck constant
	$\rho$ represents quantum density operator
	$t$ represents time
	$\mathrm{i}$ represents imaginary unit
periodic boundary condition for electric potential	$\varphi (r,t)=\varphi (r+L,t)$	boundary condition
	$L$ represents length of unit cell
	$\varphi$ represents electric potential
	$t$ represents time
Neumann boundary condition for electric potential	${n\cdot \mathrm{\nabla }\varphi (r,t)|}_{{\Gamma }_N}=0$	boundary condition
	${\Gamma }_N$ represents electrode interfaces
	$\varphi$ represents electric potential
	$t$ represents time
	$n$ represents unit normal vector
Laplace equation for the electric potential	$-\mathrm{\nabla }\left({ϵ}_s\mathrm{\nabla }\varphi \right)=0$	governing equation
	${ϵ}_s$ represents permittivity
	$\varphi$ represents electric potential

Computational tasks

optimal control, quantum time evolution, quantum stationary states, semiconductor charge neutrality

References

Optimal control of conveyor-mode spin-qubit shuttling in a Si/SiGe quantum bus in the presence of charged defects

Further links

Item	Property
control system model (bilinear)	specialized by
quantum model (closed system)	specialized by
spin qbit shuttling	modelled by

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