Network Approximation for Transport Properties of High Contrast Materials
The authors consider the following simplified system of Maxwell's equations in a domain that contains no free charges or current sources: \[ \mathbb{E}= (\rho+ iC)\nabla\times \mathbb{H},\quad \nabla\times \mathbb{E}= 0,\quad \nabla\cdot(\varepsilon \mathbb{E})= 0,\quad\nabla\cdot (\mu\mathbb{H})= 0, \] where \(\rho(x,\omega)= \delta/(\delta^2+ \omega^2\delta^2)\) is a resistance and \(C(x,\omega)= \omega\varepsilon/(\delta^2+ \omega^2\varepsilon^2)\) is a capacitance. The aim of this paper is to study the behavior of the effective resistance and capacitance when the microscopic resistance and capacitance have logarithmic high contrast behavior. The authors show analytically and numerically that the effective resistance and capacitance of high contrast material can in certain cases be approximated well by a resistor-capacitor network. In both the static case, where the network consists only of resistors, and in the quasi-static case, this can be done in general for any number of saddle points of the resistance and capacitance functions \(\rho(x)\), \(C(x)\), around which the current concentrates. The analysis used is based on variational principles.
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