Novel electrical characterization for advanced CMOS gate dielectrics

DOI10.1007/S11432-008-0068-3MaRDI QIDQ954418zbMATH OpenOpenAlexFDO

Authors Tian-Ping Ma

Publication date 10 November 2008

Published in Science in China. Series F (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s11432-008-0068-3

zbMATH Keywords

electrical characterizationgate dielectricsIETSMOS devicePASHEI

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Circuits, networks (94C99)

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Cited in

(1)

• New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors

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