Modeling and simulation of thermal chlorine etching of gallium arsenide with application to real-time feedback control
From MaRDI portal
Publication:1609469
DOI10.1016/S0895-7177(01)00169-8zbMATH Open1003.92040MaRDI QIDQ1609469FDOQ1609469
Publication date: 15 August 2002
Published in: Mathematical and Computer Modelling (Search for Journal in Brave)
Chemistry (92E99) Adaptive control/observation systems (93C40) Application models in control theory (93C95) Other natural sciences (mathematical treatment) (92F05)
Cites Work
Cited In (1)
Recommendations
- An Elementary Model for Control of a Semiconductor Etching Process π π
- Modeling and control of a semiconductor manufacturing process with an automata network: An example in plasma etch processing π π
- Title not available (Why is that?) π π
- Modeling two-dimensional diffusion-controlled wet chemical etching using a total concentration approach π π
- Adaptive step-size control in simulation of diffusive CVD processes π π
This page was built for publication: Modeling and simulation of thermal chlorine etching of gallium arsenide with application to real-time feedback control
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1609469)