Derivation of a heteroepitaxial thin-film model
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Publication:2180653
DOI10.4171/IFB/435zbMATH Open1437.35269arXiv1809.07128OpenAlexW3016277649MaRDI QIDQ2180653FDOQ2180653
Authors: Elisa Davoli, Paolo Piovano 
Publication date: 14 May 2020
Published in: Interfaces and Free Boundaries (Search for Journal in Brave)
Abstract: A variational model for epitaxially-strained thin films on rigid substrates is derived both by {Gamma}-convergence from a transition-layer setting, and by relaxation from a sharp-interface description available in the literature for regular configurations. The model is characterized by a configurational energy that accounts for both the competing mechanisms responsible for the film shape. On the one hand, the lattice mismatch between the film and the substrate generate large stresses, and corrugations may be present because film atoms move to release the elastic energy. On the other hand, flatter profiles may be preferable to minimize the surface energy. Some first regularity results are presented for energetically-optimal film profiles.
Full work available at URL: https://arxiv.org/abs/1809.07128
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Cited In (12)
- Microscopical justification of solid-state wetting and dewetting
- Existence of minimizers for the SDRI model in 2d: wetting and dewetting regime with mismatch strain
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- Study of island formation in epitaxially strained films on unbounded domains
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