Analytical validation of the Young-Dupré law for epitaxially-strained thin films
DOI10.1142/S0218202519500441zbMATH Open1427.74115arXiv1809.09991OpenAlexW2972587745WikidataQ114847103 ScholiaQ114847103MaRDI QIDQ4973274FDOQ4973274
Authors: Elisa Davoli, Paolo Piovano
Publication date: 3 December 2019
Published in: M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://arxiv.org/abs/1809.09991
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Cited In (12)
- Area quasi-minimizing partitions with a graphical constraint: relaxation and two-dimensional partial regularity
- Microscopical justification of solid-state wetting and dewetting
- Existence of minimizers for the SDRI model in 2d: wetting and dewetting regime with mismatch strain
- Erratum to ``Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part I. Mathematical formulation
- Equilibrium configurations for epitaxially strained films and material voids in three-dimensional linear elasticity
- A unified model for stress-driven rearrangement instabilities
- Microscopical justification of the Winterbottom problem for well-separated lattices
- Surface evolution of elastically stressed films
- The surface diffusion flow with elasticity in three dimensions
- Microscopic validation of a variational model of epitaxially strained crystalline films
- A regularized model for wetting/dewetting problems: positivity and asymptotic analysis
- Derivation of a heteroepitaxial thin-film model
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