A novel and precise time domain description of Mosfet low frequency noise due to random telegraph signals
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Publication:3002091
DOI10.1142/S0217979210057535zbMATH Open1213.82097arXiv1002.0392OpenAlexW3105366710MaRDI QIDQ3002091FDOQ3002091
Authors: Roberto da Silva, Gilson I. Wirth, Lucas Brusamarello 
Publication date: 19 May 2011
Published in: International Journal of Modern Physics B (Search for Journal in Brave)
Abstract: Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at the many traps stochastically distributed at the silicon-oxide (Si-SiO2) interface of MOS transistors. In this paper we propose a novel analytical and numerical approach to statistically describe the fluctuations of current due to random telegraph signal in time domain. Our results include two distinct situations: when the density of interface trap density is uniform in energy, and when it is an u-shape curve as prescribed in literature, here described as simple quadratic function. We establish formulas for relative error as function of the parameters related to capture and emission probabilities. For a complete analysis experimental u-shape curves are used and compared with the theoretical aproach.
Full work available at URL: https://arxiv.org/abs/1002.0392
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Cites Work
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- Stochastic model of self-driven two-species objects inspired by particular aspects of a pedestrian dynamics
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