Effect of RF-discharge on silicon etching in CF₄/O₂

zbMATH Open1201.76239MaRDI QIDQ3056643FDOQ3056643

Authors: A. G. Gorobchuk, Yu. N. Grigor'ev 

Publication date: 12 November 2010

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zbMATH Keywords

plasma etchingion etchersilicon etching

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of plasmas (82D10)

Cited In (2)

• ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD
• Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

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