Effect of RF-discharge on silicon etching in CF₄/O₂

MaRDI QIDQ3056643zbMATHFDO

Authors A. G. Gorobchuk, Yu. N. Grigor'ev

Publication date 12 November 2010

zbMATH Keywords

plasma etchingion etchersilicon etching

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of plasmas (82D10)

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Cited in

(2)

• Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor
• ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD

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