Effect of RF-discharge on silicon etching in CF\(_4/\)O\(_2\) (Q3056643)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Effect of RF-discharge on silicon etching in CF₄/O₂ |
scientific article; zbMATH DE number 5815878
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Effect of RF-discharge on silicon etching in CF\(_4/\)O\(_2\) |
scientific article; zbMATH DE number 5815878 |
Statements
12 November 2010
0 references
ion etcher
0 references
silicon etching
0 references
plasma etching
0 references
0.7037283182144165
0 references
0.6926235556602478
0 references
0.6791406273841858
0 references
