Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor (Q941774)
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scientific article; zbMATH DE number 5319265
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| English | Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor |
scientific article; zbMATH DE number 5319265 |
Statements
Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor (English)
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2 September 2008
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inductively coupled plasma
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electron density
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electron temperature
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power deposition
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0.727763295173645
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0.7120912671089172
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0.710088312625885
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0.7037283182144165
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