A new Shockley-Read-Hall hydrodynamical model for carriers and phonons
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Publication:3060098
DOI10.1088/1751-8113/43/44/445003zbMATH Open1220.82156OpenAlexW2060750449MaRDI QIDQ3060098FDOQ3060098
Authors: A. Rossani 
Publication date: 1 December 2010
Published in: Journal of Physics A: Mathematical and Theoretical (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1088/1751-8113/43/44/445003
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asymptotic expansiontrapsextended thermodynamicssemiconductorscarriersphononsOnsager relationshydrodynamical modelenergy-transport model
Cited In (10)
- Band-trap capture and emission in the generalized kinetic theory of electrons and holes
- Hydrodynamical modeling of charge carrier transport in semiconductors
- Exciton-catalyzed recombination-generation of electrons and holes in semiconductors: a kinetic approach
- A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
- Kawashima condition for a hyperbolic moment model of phonon hydrodynamics
- On a Shockley-Read-Hall model for semiconductors
- Generalized balance equations for an electron-phonon system
- On the Shockley–Read–Hall Model: Generation-Recombination in Semiconductors
- On the constitutive assumptions for a continuum model of scintillating crystals
- Auger effect in the generalized kinetic theory of electrons and holes
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