Modeling of radiation sensitivity of hydrogen sensors based on MISFET

DOI10.1134/S0005117916070171zbMATH Open1346.93063OpenAlexW2467080700MaRDI QIDQ329231FDOQ329231

Authors: B. I. Podlepetsky 

Publication date: 21 October 2016

Published in: Automation and Remote Control (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1134/s0005117916070171

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• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics
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zbMATH Keywords

hydrogen sensorsmodeling of radiation sensitivity

Mathematics Subject Classification ID

Application models in control theory (93C95)

Cited In (5)

• Accuracy errors of modeling of MIS-transistor sensor elements
• Radiation sensitivity modeling technique of sensors' MIS-transistor elements
• Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors
• Methods and tools for evaluating the characteristics of MIS-capacitor gas sensors
• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics

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