Accuracy errors of modeling of MIS-transistor sensor elements

DOI10.1134/S0005117920100094zbMATH Open1484.78009OpenAlexW3104987058MaRDI QIDQ828518FDOQ828518

Authors: B. I. Podlepetsky 

Publication date: 9 January 2021

Published in: Automation and Remote Control (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1134/s0005117920100094

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zbMATH Keywords

modelsapproximationserrors of modelsMIS transistor

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Statistical mechanics of semiconductors (82D37)

Cites Work

• Modeling of radiation sensitivity of hydrogen sensors based on MISFET
• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics
• Radiation sensitivity modeling technique of sensors' MIS-transistor elements

Cited In (6)

• Methodic errors of microelectromechanical pressure sensors in isotropic modeling of the elastic properties of single-crystal silicon
• Radiation sensitivity modeling technique of sensors' MIS-transistor elements
• Modeling of radiation sensitivity of hydrogen sensors based on MISFET
• Some consequences of sensor error in a model for passive detection
• Methods and tools for evaluating the characteristics of MIS-capacitor gas sensors
• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics

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