Modelling and simulating charge sensitive mos circuits
DOI10.1080/13873959608837030zbMATH Open0866.94035OpenAlexW2049494117MaRDI QIDQ4335944FDOQ4335944
Authors: Uwe Feldmann, Michael Günther, Georg Denk 
Publication date: 23 June 1997
Published in: Mathematical Modelling of Systems (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/13873959608837030
Recommendations
- scientific article; zbMATH DE number 4045666
- scientific article; zbMATH DE number 2158973
- A new modeling technique for mixed-mode simulation of CMOS circuits
- Charge-oriented extrapolation methods in digital circuit simulation
- Publication:3483738
- Modélisation du transport des charges électriques dans les semiconducteurs
- Modelling of source-coupled logic gates
- Static and dynamic numerical device modeling for transient circuit simulation
- scientific article; zbMATH DE number 47807
MOS circuitselectric circuit simulationMOS transistorscapacitance and charge modelscharge distribution effectsefficient and reliable integration scheme
Probabilistic models, generic numerical methods in probability and statistics (65C20) Circuits, networks (94C99) Software, source code, etc. for problems pertaining to information and communication theory (94-04)
Cited In (8)
- Noise analysis in circuit simulation with stochastic differential equations
- Accuracy errors of modeling of MIS-transistor sensor elements
- Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
- An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation
- Charge-oriented extrapolation methods in digital circuit simulation
- Title not available (Why is that?)
- Title not available (Why is that?)
- Modelling CoolMOSC3 transistor characteristics in SPICE
This page was built for publication: Modelling and simulating charge sensitive mos circuits
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4335944)
