Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs

DOI10.1049/EL:19911149MaRDI QIDQ3359698zbMATH OpenOpenAlexFDO

Authors M. Benabbas, B. Marir, D. Bajon, H. Baudrand

Publication date 1991

Published in Electronics Letters (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1049/el:19911149

zbMATH Keywords

potentialwave functioncarrier distributionsconduction band bendingcoupled Schrödinger-Poisson equationsemi-conductor devices

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05)

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Cited in

(2)

• Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices
• Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well

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