Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs

DOI10.1049/EL:19911149zbMATH Open0733.65085OpenAlexW1995593993MaRDI QIDQ3359698FDOQ3359698

Authors: M. Benabbas, B. Marir, D. Bajon, H. Baudrand 

Publication date: 1991

Published in: Electronics Letters (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1049/el:19911149

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zbMATH Keywords

potentialwave functioncarrier distributionsconduction band bendingcoupled Schrödinger-Poisson equationsemi-conductor devices

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05)

Cited In (2)

• Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices
• Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well

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