On quantum hydrodynamic models for electronic transport in nanoscale semiconductor devices

DOI10.1142/S0217984910022470MaRDI QIDQ3556827zbMATH OpenOpenAlexFDO

Authors Eugenia Tulcan-Paulescu, Dan Comănescu, Marius Paulescu

Publication date 26 April 2010

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984910022470

zbMATH Keywords

ballistic diodeBohm potentialfinite differencesquantum hydrodynamicsresonant tunneling diode

Mathematics Subject Classification ID

Quantum hydrodynamics and relativistic hydrodynamics (76Y05) Motion of charged particles (78A35) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cites work

• A Suggested Interpretation of the Quantum Theory in Terms of "Hidden" Variables. I
• Numerical approximation of the viscous quantum hydrodynamic model for semiconductors
• Path integral approach to quantum Brownian motion
• Quantum Transport: Atom to Transistor

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(10)

• Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
• A quantum energy transport model for semiconductor device simulation
• Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
• scientific article; zbMATH DE number 6520761 (Why is no real title available?)
• Dispersive/hyperbolic hydrodynamic models for quantum transport (in semiconductor devices)
• Quantum corrected drift-diffusion modeling and simulation of tunneling effects in nanoscale semiconductor devices
• The Quantum Hydrodynamic Model for Semiconductor Devices
• ON A DISCRETE MODEL FOR QUANTUM TRANSPORT IN SEMI-CONDUCTOR DEVICES
• Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

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