Influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers

DOI10.1142/S0217984910022925zbMATH Open1191.82116MaRDI QIDQ3566465FDOQ3566465

Authors: E. L. Pankratov 

Publication date: 8 June 2010

Published in: Modern Physics Letters B (Search for Journal in Brave)

Recommendations

• Influence of porosity of materials on redistribution of dopant during manufacturing of diffusion-junction rectifiers in semiconductor heterostructures
• Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects
• DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME
• Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth
• Impurity diffusion through strained semiconductors

zbMATH Keywords

\(p\)-\(n\) junctions in heterostructuredecreasing of depth of \(p\)-\(n\) junctionsinfluence of mechanical stress on depth of \(p\)-\(n\) junctions

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Numerical simulations of island formation in a coherent strained epitaxial thin film system

Cited In (5)

• Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth
• DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME
• Influence of porosity of materials on redistribution of dopant during manufacturing of diffusion-junction rectifiers in semiconductor heterostructures
• Optimization of diffusion process for production of systems of diffused-junction rectifiers
• Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects

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