Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth

DOI10.1016/J.NONRWA.2009.02.028MaRDI QIDQ974546zbMATH OpenOpenAlexFDO

Authors E. L. Pankratov

Publication date 3 June 2010

Published in Nonlinear Analysis. Real World Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.nonrwa.2009.02.028

zbMATH Keywords

alternative approach of modelingdelta-dopingepitaxial growth of heterostructure

Mathematics Subject Classification ID

PDEs in connection with fluid mechanics (35Q35) Liquid crystals (76A15) Statistical mechanics of crystals (82D25) Statistical mechanics of semiconductors (82D37)

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Cited in

(3)

• Influence of porosity of materials on redistribution of dopant during manufacturing of diffusion-junction rectifiers in semiconductor heterostructures
• Influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers
• Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects

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