Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth

DOI10.1016/J.NONRWA.2009.02.028zbMATH Open1192.35140OpenAlexW2009437480MaRDI QIDQ974546FDOQ974546

Authors: E. L. Pankratov 

Publication date: 3 June 2010

Published in: Nonlinear Analysis. Real World Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.nonrwa.2009.02.028

Recommendations

• The nonlinear effect of lattice mismatch parameter on morphological and compositional instabilities of epitaxial layers
• Influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers
• Equilibria and dislocations in epitaxial growth
• Influence of porosity of materials on redistribution of dopant during manufacturing of diffusion-junction rectifiers in semiconductor heterostructures
• Multiscale modelling in epitaxial growth
• Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects
• Energetics of misfit dislocation dipoles in anisotropic epitaxial films with nanoscale compositional modulation
• Multiscale modeling for epitaxial growth
• Morphological Evolution of Inhomogeneities Due to Diffusion and Epitaxy

zbMATH Keywords

alternative approach of modelingdelta-dopingepitaxial growth of heterostructure

Mathematics Subject Classification ID

PDEs in connection with fluid mechanics (35Q35) Liquid crystals (76A15) Statistical mechanics of crystals (82D25) Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)

Cited In (3)

• Influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers
• Influence of porosity of materials on redistribution of dopant during manufacturing of diffusion-junction rectifiers in semiconductor heterostructures
• Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects

This page was built for publication: Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q974546)