Partly dissipative reaction-diffusion systems and a model of phosphorus diffusion in silicon
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Publication:4032228
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Cites work
- scientific article; zbMATH DE number 3277871 (Why is no real title available?)
- Boundedness and Decay Results for Reaction-Diffusion Systems
- Finite time blowup for semilinear reactive-diffusive systems
- Finite-Dimensional Attractors Associated with Partly Dissipative Reaction-Diffusion Systems
- Global Existence and Boundedness in Reaction-Diffusion Systems
- Global Existence for Semilinear Parabolic Systems
- Global solutions of reaction-diffusion systems
Cited in
(11)- On the basic equations for carrier transport in semiconductors
- Asymptotic behaviour of a boundary layer solution to a stationary partly dissipative system with a multiple root of the degenerate equation
- Maximum a posteriori estimation of activation energies that control silicon self-diffusion
- Diffusion of Dopant in Crystalline Silicon: An Asymptotic Analysis
- Invariant regions and existence of global solutions to a generalized m-component reaction-diffusion system with tridiagonal symmetric Toeplitz diffusion matrix
- scientific article; zbMATH DE number 1382329 (Why is no real title available?)
- Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors
- Asymptotic behaviour of the solution to a~singularly perturbed partially dissipative system with a~multiple root of the degenerate equation
- Singularly perturbed partially dissipative systems of equations
- A REACTION-DIFFUSION SYSTEM MODELLING THE POST IRRIDIATION OXYDATION OF A.< ISOTACTIC POLYPROPYLENE
- Singularly perturbed partly dissipative reaction-diffusion systems in case of exchange of stabilities.
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