Partly dissipative reaction-diffusion systems and a model of phosphorus diffusion in silicon
From MaRDI portal
Publication:4032228
DOI10.1016/0362-546X(92)90083-QzbMATH Open0773.35029MaRDI QIDQ4032228FDOQ4032228
Authors: Selwyn L. Hollis, J. J. Morgan 
Publication date: 1 April 1993
Published in: Nonlinear Analysis: Theory, Methods & Applications (Search for Journal in Brave)
Recommendations
- scientific article; zbMATH DE number 1382329
- Diffusion of Dopant in Crystalline Silicon: An Asymptotic Analysis
- Dynamics of Dissipative Structures in Reaction-Diffusion Equations
- Publication:4889622
- Diffusion Limit of a Semiconductor Boltzmann–Poisson System
- DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM
- A model for diffusive systems: beyond the Arrhenius mechanism
- Diffusion phenomena for partially dissipative hyperbolic systems
- Diffusion phenomena for partially dissipative hyperbolic systems
- Self-similar solutions for diffusion in semiconductors
Cites Work
- Boundedness and Decay Results for Reaction-Diffusion Systems
- Title not available (Why is that?)
- Global solutions of reaction-diffusion systems
- Global Existence for Semilinear Parabolic Systems
- Global Existence and Boundedness in Reaction-Diffusion Systems
- Finite-Dimensional Attractors Associated with Partly Dissipative Reaction-Diffusion Systems
- Finite time blowup for semilinear reactive-diffusive systems
Cited In (9)
- Asymptotic behaviour of a boundary layer solution to a stationary partly dissipative system with a multiple root of the degenerate equation
- Singularly perturbed partly dissipative reaction-diffusion systems in case of exchange of stabilities.
- Maximum a posteriori estimation of activation energies that control silicon self-diffusion
- Singularly perturbed partially dissipative systems of equations
- Asymptotic behaviour of the solution to a singularly perturbed partially dissipative system with a multiple root of the degenerate equation
- On the basic equations for carrier transport in semiconductors
- Diffusion of Dopant in Crystalline Silicon: An Asymptotic Analysis
- Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors
- Invariant regions and existence of global solutions to a generalized m-component reaction-diffusion system with tridiagonal symmetric Toeplitz diffusion matrix
This page was built for publication: Partly dissipative reaction-diffusion systems and a model of phosphorus diffusion in silicon
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4032228)
