Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors

DOI10.1016/0362-546X(95)00169-VzbMATH Open0866.35050MaRDI QIDQ5689178FDOQ5689178

Authors: Konrad Gröger, R. Hünlich, Annegret Glitzky 

Publication date: 24 July 1997

Published in: Nonlinear Analysis: Theory, Methods & Applications (Search for Journal in Brave)

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zbMATH Keywords

a priori estimatesconvergence theoremfirst order backward difference formulas

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Motion of charged particles (78A35)

Cites Work

• Geometric theory of semilinear parabolic equations
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• Fundamental Inequalities for Discrete and Discontinuous Functional Equations
• Initial Boundary Value Problems from Semiconductor Device Theory
• Diffusion of Dopant in Crystalline Silicon: An Asymptotic Analysis
• Partly dissipative reaction-diffusion systems and a model of phosphorus diffusion in silicon
• Self-similar solutions for diffusion in semiconductors
• Self-similar solutions for infiltration of dopant into semiconductors
• Discrete-time GALERKIN Methods for Nonlinear Evolution Equations
• On the Diffusion of Point Defects in Silicon
• Title not available (Why is that?)
• On the question of global existence for reaction-diffusion systems with mixed boundary conditions

Cited In (2)

• Free energy and dissipation rate for reaction diffusion processes of electrically charged species
• Global estimates and asymptotics for electro reaction diffusion systems in heterostructures

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