A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

DOI10.1002/JNM.482zbMATH Open1034.82066OpenAlexW2140827583WikidataQ112878859 ScholiaQ112878859MaRDI QIDQ4804591FDOQ4804591

Authors: A. J. García-Loureiro, Juan M. Lopez-Gonzalez, Tomás F. Pena 

Publication date: 28 April 2003

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.482

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zbMATH Keywords

FEMdomain decomposition methodsmulticomputersdevice simulatorHBT

Mathematics Subject Classification ID

Multigrid methods; domain decomposition for boundary value problems involving PDEs (65N55) Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)
• Numerical analysis of abrupt heterojunction bipolar transistors

Cited In (7)

• Verification of 1D BJT numerical simulation and its application to mixed-level device and circuit simulation
• Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices
• Title not available (Why is that?)
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
• Efficient three-dimensional parallel simulations of PHEMTs
• Title not available (Why is that?)
• Title not available (Why is that?)

Uses Software

• P-SPARSLIB
• METIS

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