A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

DOI10.1002/JNM.482MaRDI QIDQ4804591zbMATH OpenOpenAlexWikidataFDO

Authors A. J. García-Loureiro, Juan M. Lopez-Gonzalez, Tomás F. Pena

Publication date 28 April 2003

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.482

zbMATH Keywords

FEMdomain decomposition methodsmulticomputersdevice simulatorHBT

Mathematics Subject Classification ID

Multigrid methods; domain decomposition for boundary value problems involving PDEs (65N55) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 1953446 (Why is no real title available?)
• Numerical analysis of abrupt heterojunction bipolar transistors

Cited in

(7)

• Verification of 1D BJT numerical simulation and its application to mixed-level device and circuit simulation
• Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices
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• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
• Efficient three-dimensional parallel simulations of PHEMTs
• scientific article; zbMATH DE number 434571 (Why is no real title available?)
• scientific article; zbMATH DE number 1760090 (Why is no real title available?)

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• P-SPARSLIB

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