A FREE BOUNDARY PROBLEM ASSOCIATED WITH OXIDATION OF SILICON

DOI10.1524/ANLY.1995.15.4.393zbMATH Open0840.35127OpenAlexW2313003623MaRDI QIDQ4864024FDOQ4864024

Authors: W. Merz, Jianhua Zhang 

Publication date: 29 January 1996

Published in: Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1524/anly.1995.15.4.393

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zbMATH Keywords

existenceuniquenessoxidation of silicondiffusion of an oxidantgrowth of the oxide layer

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Free boundary problems for PDEs (35R35)

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• On a free boundary problem modelling thermal oxidation of silicon
• UNIQUENESS AND EXISTENCE OF THE SOLUTION OF A DIFFUSION EQUATION WITH MOVING BOUNDARIES
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• A free boundary value problem modeling thermal oxidation of silicon
• A free boundary value problem for the one dimensional oxidation process of silicon
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