Smooth Transonic Steady States of Hydrodynamic Model for Semiconductors

DOI10.1137/21M139582XzbMath1487.35329OpenAlexW3197184456MaRDI QIDQ4958024

Mengmeng Wei, Guojing Zhang, Kai-Jun Zhang, Ming Mei

Publication date: 6 September 2021

Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/21m139582x

zbMATH Keywords

Euler-Poisson equationstrajectorydoping profiletransonic solutionhydrodynamic model of semiconductor

Mathematics Subject Classification ID

PDEs in connection with fluid mechanics (35Q35) Degenerate elliptic equations (35J70) Free boundary problems for PDEs (35R35) Existence, uniqueness, and regularity theory for compressible fluids and gas dynamics (76N10)

Related Items (7)

Radially symmetric spiral flows of the compressible Euler-Poisson system for semiconductors ⋮ Sonic-supersonic-shock-subsonic-sonic solution to Euler-Poisson system with varying background charges ⋮ Structural Stability of Radial Interior Subsonic Steady-States to n-D Euler-Poisson System of Semiconductor Models with Sonic Boundary ⋮ Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary ⋮ Subsonic steady-states for bipolar hydrodynamic model for semiconductors ⋮ Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors ⋮ Transonic Steady-States of Euler--Poisson Equations for Semiconductor Models with Sonic Boundary

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