Smooth transonic steady states of hydrodynamic model for semiconductors
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Publication:4958024
DOI10.1137/21M139582XzbMATH Open1487.35329OpenAlexW3197184456MaRDI QIDQ4958024FDOQ4958024
Authors: Mengmeng Wei, Ming Mei, Guojing Zhang, Kaijun Zhang 
Publication date: 6 September 2021
Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/21m139582x
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trajectoryEuler-Poisson equationsdoping profiletransonic solutionhydrodynamic model of semiconductor
PDEs in connection with fluid mechanics (35Q35) Degenerate elliptic equations (35J70) Free boundary problems for PDEs (35R35) Existence, uniqueness, and regularity theory for compressible fluids and gas dynamics (76N10)
Cites Work
- Asymptotic stability of a stationary solution to a thermal hydrodynamic model for semiconductors
- A steady state potential flow model for semiconductors
- On a one-dimensional steady-state hydrodynamic model for semiconductors
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- Asymptotic convergence to stationary waves for unipolar hydrodynamic model of semiconductors
- Title not available (Why is that?)
- Title not available (Why is that?)
- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
- Asymptotic convergence to planar stationary waves for multi-dimensional unipolar hydrodynamic model of semiconductors
- Example of supersonic solutions to a steady state Euler-Poisson system
- Subsonic flow for the multidimensional Euler-Poisson system
- Transonic shock solutions for a system of Euler-Poisson equations
- A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL
- Subsonic Solutions for Steady Euler--Poisson System in Two-Dimensional Nozzles
- A viscous approximation for a 2-D steady semiconductor or transonic gas dynamic flow: Existence theorem for potential flow
- A phase analysis of transonic solutions for the hydrodynamic semiconductor model
- Stability of transonic shock solutions for one-dimensional Euler-Poisson equations
- Non-isentropic multi-transonic solutions of Euler-Poisson system
- Subsonic solutions to a one-dimensional non-isentropic hydrodynamic model for semiconductors
- Steady hydrodynamic model of semiconductors with sonic boundary. I: Subsonic doping profile
- Steady hydrodynamic model of semiconductors with sonic boundary. II: Supersonic doping profile
- Steady hydrodynamic model of semiconductors with sonic boundary and transonic doping profile
Cited In (16)
- Transonic steady-states of Euler-Poisson equations for semiconductor models with sonic boundary
- Relaxation time limits of subsonic steady states for hydrodynamic model of semiconductors with sonic or nonsonic boundary
- Sonic-supersonic-shock-subsonic-sonic solution to Euler-Poisson system with varying background charges
- Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary
- Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors
- Radially symmetric spiral flows of the compressible Euler-Poisson system for semiconductors
- Stability of transonic strong shock waves for the one-dimensional hydrodynamic model for semiconductors
- Subsonic steady-states for bipolar hydrodynamic model for semiconductors
- Example of supersonic solutions to a steady state Euler-Poisson system
- Relaxation time limits of subsonic steady states for multidimensional hydrodynamic model of semiconductors
- Steady hydrodynamic model of semiconductors with sonic boundary and transonic doping profile
- The uniqueness of steady sonic-subsonic solution to hydrodynamic model for semiconductors
- Structural stability of subsonic steady-states to the bipolar Euler-Poisson equations with degenerate boundary
- Structural Stability of Radial Interior Subsonic Steady-States to n-D Euler-Poisson System of Semiconductor Models with Sonic Boundary
- Steady hydrodynamic model of semiconductors with sonic boundary. I: Subsonic doping profile
- Steady hydrodynamic model of semiconductors with sonic boundary. II: Supersonic doping profile
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