Counting statistics and microreversibility in stochastic models of transistors

DOI10.1088/1742-5468/ABBCD5zbMATH Open1459.82255arXiv2004.13622OpenAlexW3022640466MaRDI QIDQ5857412FDOQ5857412

Authors: Jiayin Gu, P. Gaspard 

Publication date: 1 April 2021

Published in: Journal of Statistical Mechanics: Theory and Experiment (Search for Journal in Brave)

Abstract: Multivariate fluctuation relations are established in three stochastic models of transistors, which are electronic devices with three ports and thus two coupled currents. In the first model, the transistor has no internal state variable and particle exchanges between the ports is described as a Markov jump process with constant rates. In the second model, the rates linearly depend on an internal random variable, representing the occupancy of the transistor by charge carriers. The third model has rates nonlinearly depending on the internal occupancy. For the first and second models, finite-time multivariate fluctuation relations are also established giving insight into the convergence towards the asymptotic form of multivariate fluctuation relations in the long-time limit. For all the three models, the transport properties are shown to satisfy Onsager's reciprocal relations in the linear regime close to equilibrium as well as their generalizations holding in the nonlinear regimes farther away from equilibrium, as a consequence of microreversibility.

Full work available at URL: https://arxiv.org/abs/2004.13622

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zbMATH Keywords

current fluctuationsfluctuation theoremstransport properties

Mathematics Subject Classification ID

Stochastic methods (Fokker-Planck, Langevin, etc.) applied to problems in time-dependent statistical mechanics (82C31) Irreversible thermodynamics, including Onsager-Machlup theory (82C35) Circuits in qualitative investigation and simulation of models (94C60)

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Cited In (1)

• Exact statistics and thermodynamic uncertainty relations for a periodically driven electron pump

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