Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode
DOI10.1016/J.JMAA.2010.12.023zbMATH Open1228.35084OpenAlexW2092924748MaRDI QIDQ633689FDOQ633689
Authors: Ansgar Jüngel, René Pinnau, Elisa Röhrig 
Publication date: 29 March 2011
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2010.12.023
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Cites Work
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- An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
- On a hierarchy of macroscopic models for semiconductors
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
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