Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
DOI10.3103/S1062873810020292zbMATH Open1233.82029OpenAlexW1982904372MaRDI QIDQ662803FDOQ662803
Authors: V. S. Kharlamov, D. V. Kulikov, Yu. V. Trushin, P. Nader, P. Mazri, Th. Stauden, J. Pezoldt 
Publication date: 24 February 2012
Published in: Bulletin of the Russian Academy of Sciences: Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.3103/s1062873810020292
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