Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

DOI10.3103/S1062873810020292MaRDI QIDQ662803zbMATH OpenOpenAlexFDO

Authors V. S. Kharlamov, D. V. Kulikov, Yu. V. Trushin, P. Nader, P. Mazri, Th. Stauden, J. Pezoldt

Publication date 24 February 2012

Published in Bulletin of the Russian Academy of Sciences: Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.3103/s1062873810020292

zbMATH Keywords

molecular-beam epitaxy

Mathematics Subject Classification ID

Interface problems; diffusion-limited aggregation in time-dependent statistical mechanics (82C24) Statistical mechanics of semiconductors (82D37)

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Cited in

(1)

• A Multiscale Study of the Epitaxial CVD of Si from Chlorosilanes

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