Computing transient gating charge movement of voltage-dependent ion channels
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Publication:700019
DOI10.1023/A:1015712824133zbMATH Open0998.92010DBLPjournals/jcns/VargheseB02OpenAlexW1511252524WikidataQ51641199 ScholiaQ51641199MaRDI QIDQ700019FDOQ700019
Authors: Anthony Varghese, Linda M. Boland 
Publication date: 29 September 2002
Published in: Journal of Computational Neuroscience (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1023/a:1015712824133
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Cited In (13)
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- Voltage-sensitive ion channels. Biophysics of molecular excitability
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- A single compartment model of pacemaking in dissasociated substantia nigra neurons. Stability and energy analysis
- Exploring voltage-dependent ion channels in silico by hysteretic conductance
- Voltage and frequency dependence of prestin-associated charge transfer
- Thermodynamically Equivalent Silicon Models of Voltage-Dependent Ion Channels
- Discrete-state model of coupled ion permeation and fast gating in ClC chloride channels
- A bubble model for the gating of \(\mathrm{K_v}\) channels
- Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel
- Relaxation phenomena in the (in)activation gates of the voltage-gated ion channels
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