Partly three-dimensional global modeling of a silicon Czochralski furnace. I: Principles, formulation and implementation of the model

DOI10.1016/J.IJHEATMASSTRANSFER.2005.04.031MaRDI QIDQ978361zbMATH OpenOpenAlexFDO

Authors Lijun Liu, Koichi Kakimoto

Publication date 24 June 2010

Published in International Journal of Heat and Mass Transfer (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.ijheatmasstransfer.2005.04.031

zbMATH Keywords

computer simulationCzochralski methodglobal modelingradiationsemiconducting silicon

Mathematics Subject Classification ID

Multiphase and multicomponent flows (76T99) Waves and radiation in optics and electromagnetic theory (78A40) Stefan problems, phase changes, etc. (80A22)

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Cited in

(5)

• Homogenised model for the electrical current distribution within a submerged arc furnace for silicon production
• Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth
• Global modelling of heat transfer in crystal growth furnaces
• Application of the proper orthogonal decomposition to turbulent convective flows in a simulated Czochralski system
• Partly three-dimensional global modeling of a silicon Czochralski furnace. II: Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field

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