Partly three-dimensional global modeling of a silicon Czochralski furnace. II: Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field

DOI10.1016/J.IJHEATMASSTRANSFER.2005.04.030MaRDI QIDQ978362zbMATH OpenOpenAlexFDO

Authors Lijun Liu, Koichi Kakimoto

Publication date 24 June 2010

Published in International Journal of Heat and Mass Transfer (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.ijheatmasstransfer.2005.04.030

zbMATH Keywords

computer simulationCzochralski methodglobal modelingsemiconducting silicontransverse magnetic field

Mathematics Subject Classification ID

Multiphase and multicomponent flows (76T99) Magnetohydrodynamics and electrohydrodynamics (76W05) Stefan problems, phase changes, etc. (80A22)

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• Effect of static magnetic field on a thermal conductivity measurement of a molten droplet using an electromagnetic levitation technique
• A model for the heating of slender samples in monoellipsoidal mirror furnaces
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• Elliptic temperature contours under a transverse magnetic field computed for a Czochralski melt
• Tailoring the oxygen distribution in 300 mm Czochralski crystal of pure silicon using cusp magnetic field
• CFD modelling of the effect of furnace crater pressure on the melt and gas flows in the submerged arc furnaces used for silicon production
• Global modelling of heat transfer in crystal growth furnaces
• Partly three-dimensional global modeling of a silicon Czochralski furnace. I: Principles, formulation and implementation of the model

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