Modeling radiative properties of nanoscale patterned wafers
DOI10.1007/S11431-009-0308-9zbMATH Open1193.78006OpenAlexW2073792534MaRDI QIDQ987213FDOQ987213
Authors: AiHua Wang, Jiu-Ju Cai 
Publication date: 13 August 2010
Published in: Science China. Technological Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s11431-009-0308-9
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Cites Work
Cited In (16)
- Device scaling effect on the spectral-directional absorptance of Wafer's front side
- Ab initio calculations of thermal radiative properties: the semiconductor GaAs
- Thermal budget control for processes with spike-shaped temperature profiles: application to rapid thermal annealing
- The effect of laser light propagation through a self-induced inhomogeneous process gas on temperature dependent laser-assisted chemical etching.
- Investigation on emissive properties of peroskite-type oxide LSMO with grating surface
- Directional radiative properties of anisotropic rough silicon and gold surfaces
- Title not available (Why is that?)
- Investigation on the temperature-dependence of absorption properties of solar cells with micro-structured surfaces
- Geometric advection and its application in the emulation of high aspect ratio structures
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- Optimal design of induction heating equipment for high‐speed processing of a semiconductor
- Effects of nanoscale features on infrared radiative properties of heavily doped silicon complex gratings
- Pattern scaling effect on the radiative properties of wafer's surface
- Title not available (Why is that?)
- Radiative Properties of Semiconductors
- Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography
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