Semiconductor radiation detectors device physics

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The book contains an introduction to basic semiconductor physics and serves as a basic for academic teaching as well as a reference for all those active in the development or use of semiconductor detectors. In the presenting the material, emphasis is given to the principle of physics in detection and device structures. A major part is devoted to readout electronics and considerations of noise in detector-amplifier systems. The basic properties of semiconductors and well known structures are reviewed in Chapters 2 and 3. The special properties of semiconductors are discussed in Chapter 4. The basic mechanisms of charge generation are also discussed in Chapter 2, and further information is given in Chapter 4 for several semiconductor materials and in Chapter 11 with respect to radiation damage. The most basic radiation detector, a rectifying junction with or without reverse bias, is discussed in Chapter 5, while more sophisticated detectors are described in Chapter 6. The question of integration between detector and ancillary electronics (Chapter 8) and the description of detectors with intrinsic amplification (Chapter 9) follow the rather lengthy Chapter 7 on detector electronics in general. A basic explanation of the principles of transistors precedes in Chapter 7 the discussion on the measurement of charge. Chapter 10 gives a very short review on device technology. Chapter 11 combines the related subject of device stability, radiation damage and radiation hardness. A large part of the Chapter deals with the physical reasons for these changes and the way in which these changes are parameterized. An indication of how device simulation can be performed is presented in Chapter 12. The final part of the book sets out useful reference material for the work.











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