Pages that link to "Item:Q1396221"
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The following pages link to Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle (Q1396221):
Displayed 11 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands (Q534826) (← links)
- Electron-phonon hydrodynamical model for semiconductors (Q638727) (← links)
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC (Q1928085) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation (Q2501857) (← links)
- Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820) (← links)
- A hydrodynamical model for holes in silicon semiconductors (Q2970528) (← links)
- Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle (Q3544555) (← links)
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle (Q4672394) (← links)