Pages that link to "Item:Q1591775"
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The following pages link to The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models (Q1591775):
Displayed 12 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands (Q534826) (← links)
- A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons (Q680166) (← links)
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) (← links)
- Nonlinear nonviscous hydrodynamical models for charge transport in the framework of extended thermodynamic methods (Q1609414) (← links)
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC (Q1928085) (← links)
- Seebeck effect in silicon semiconductors (Q1928095) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry (Q2359048) (← links)
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation (Q2878027) (← links)
- A hydrodynamical model for holes in silicon semiconductors (Q2970528) (← links)