Pages that link to "Item:Q3618137"
From MaRDI portal
The following pages link to A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs (Q3618137):
Displayed 4 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820) (← links)