Pages that link to "Item:Q3684483"
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The following pages link to A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations (Q3684483):
Displaying 14 items.
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions (Q615977) (← links)
- Junction layer analysis in one-dimensional steady-state Euler-Poisson equations (Q924108) (← links)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (Q960886) (← links)
- Simulation of visible and ultra-violet group-III nitride light emitting diodes (Q2490311) (← links)
- Boundary layer analysis and quasi-neutral limits in the drift-diffusion equations (Q2781483) (← links)
- Uniform asymptotic error estimates for semiconductor device and electrochemistry equations (Q3480416) (← links)
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS (Q3483645) (← links)
- Singular perturbation analysis of the steady-state Poisson–Nernst–Planck system: Applications to ion channels (Q3529504) (← links)
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence (Q4012382) (← links)
- A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations (Q4030871) (← links)
- Singular perturbation theory applied to the electrochemistry equations in the case of electroneutrality (Q4735457) (← links)
- Global Solutions to the Coupled Chemotaxis-Fluid Equations (Q4933531) (← links)
- Two-Dimensional Modeling of Electron Flow Through a Poorly Conducting Layer (Q5253626) (← links)
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion (Q5691223) (← links)
