The following pages link to (Q4326771):
Displaying 9 items.
- A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids (Q422893) (← links)
- Analysis on block-centered finite differences of numerical simulation of semiconductor device detector (Q671087) (← links)
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile (Q730221) (← links)
- Finite volume element approximation and analysis for a kind of semiconductor device simulation (Q980422) (← links)
- Characteristic finite difference fractional step methods for three-dimensional semiconductor device of heat conduction (Q1428902) (← links)
- A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis (Q1690583) (← links)
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh (Q2155109) (← links)
- The modified method of characteristics with mixed finite element domain decomposition procedures for the transient behavior of a semiconductor device (Q3112435) (← links)
- An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis (Q6157896) (← links)
