Pages that link to "Item:Q870557"
From MaRDI portal
The following pages link to 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557):
Displaying 5 items.
- Semiconductor device design using the \textsc{BiMADS} algorithm (Q401540) (← links)
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709) (← links)
- 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896) (← links)
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
