Time domain global modelling of EM propagation in semiconductor using irregular grids

DOI10.1002/JNM.458MaRDI QIDQ4543821zbMATH OpenOpenAlexFDO

Authors Hsiao-Ping Tsai, Roberto Coccioli, Tatsuo Itoh

Publication date 8 August 2002

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.458

zbMATH Keywords

global modellingsemiconductor device simulationtime-domain analysis

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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