GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (Q3521666): Difference between revisions

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+On large time asymptotics for drift-diffusion-poisson systems
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+ON CONVEX SOBOLEV INEQUALITIES AND THE RATE OF CONVERGENCE TO EQUILIBRIUM FOR FOKKER-PLANCK TYPE EQUATIONS
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+Long time behavior of solutions of Nernst-Planck and Debye-Hückel drift-diffusion systems
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+Entropy dissipation methods for degenerate parabolic problems and generalized Sobolev inequalities
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+Exponential decay toward equilibrium via entropy methods for reaction-diffusion equations
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+STATIONARY STATES IN PLASMA PHYSICS: MAXWELLIAN SOLUTIONS OF THE VLASOV-POISSON SYSTEM
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+On singular limits of mean-field equations.
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+On the time-dependent drift-diffusion model for semiconductors
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+Global solutions of the time-dependent drift-diffusion semiconductor equations
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+Asymptotic behavior of the drift-diffusion semiconductor equations
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+On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
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+Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
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+Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
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+QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
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+https://doi.org/10.1142/s0218202508002735
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+W1987610752
@@ Property / OpenAlex ID: W1987610752 / rank @@
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