Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors (Q5931938): Difference between revisions

From MaRDI portal
Set OpenAlex properties.
ReferenceBot (talk | contribs)
Changed an Item
Property / cites work
 
Property / cites work: On a hierarchy of macroscopic models for semiconductors / rank
 
Normal rank
Property / cites work
 
Property / cites work: An energy-transport model for semiconductors derived from the Boltzmann equation. / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4252081 / rank
 
Normal rank
Property / cites work
 
Property / cites work: On a one-dimensional steady-state hydrodynamic model for semiconductors / rank
 
Normal rank
Property / cites work
 
Property / cites work: The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors / rank
 
Normal rank
Property / cites work
 
Property / cites work: The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations / rank
 
Normal rank
Property / cites work
 
Property / cites work: THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS / rank
 
Normal rank
Property / cites work
 
Property / cites work: Weak solutions to a hydrodynamic model for semiconductors: the Cauchy problem / rank
 
Normal rank
Property / cites work
 
Property / cites work: Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4023822 / rank
 
Normal rank
Property / cites work
 
Property / cites work: The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations / rank
 
Normal rank
Property / cites work
 
Property / cites work: On a System of Nonlinear Boltzmann Equations of Semiconductor Physics / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4009097 / rank
 
Normal rank
Property / cites work
 
Property / cites work: ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES / rank
 
Normal rank
Property / cites work
 
Property / cites work: Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q4944617 / rank
 
Normal rank

Revision as of 15:51, 3 June 2024

scientific article; zbMATH DE number 1594744
Language Label Description Also known as
English
Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
scientific article; zbMATH DE number 1594744

    Statements

    Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors (English)
    0 references
    0 references
    0 references
    6 June 2002
    0 references
    Some initial-boundary value problems are considered arising in the description of one-dimensional hydrodynamic and drift-diffusion models for semiconductors [\textit{P. A. Markowich, C. A. Ringhofer,} and \textit{C. Schmeiser,} Semiconductor equations, Springer, Wien (1990; Zbl 0765.35001)]. Under appropriate restrictions, the authors use some energy estimates in order to analyze the large-time asymptotics of the solutions to these equations.
    0 references
    hydrodynamic semiconductor equations
    0 references
    drift-diffusion model
    0 references
    large-time asymptotics
    0 references

    Identifiers

    0 references
    0 references
    0 references
    0 references
    0 references