GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (Q3521666): Difference between revisions
From MaRDI portal
ReferenceBot (talk | contribs) Changed an Item |
Set OpenAlex properties. |
||
| Property / full work available at URL | |||
| Property / full work available at URL: https://doi.org/10.1142/s0218202508002735 / rank | |||
Normal rank | |||
| Property / OpenAlex ID | |||
| Property / OpenAlex ID: W1987610752 / rank | |||
Normal rank | |||
Latest revision as of 08:56, 30 July 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL |
scientific article |
Statements
GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (English)
0 references
26 August 2008
0 references
3D whole-space case
0 references
elliptic-parabolic system
0 references
weak solution
0 references
unique equilibrium
0 references
recombination-generation rate
0 references
0 references
0 references
0 references
0 references
0 references
