Numerical discretization of energy-transport model for semiconductors using high-order compact schemes

DOI10.1016/S0893-9659(02)00033-2zbMath1001.82116MaRDI QIDQ1614112

Michel Fournié

Publication date: 3 September 2002

Published in: Applied Mathematics Letters (Search for Journal in Brave)

zbMATH Keywords

numerical discretization; semiconductors; energy-transport model; high-order compact schemes

Mathematics Subject Classification ID

82D37: Statistical mechanics of semiconductors

65N06: Finite difference methods for boundary value problems involving PDEs

Related Items

Numerical Schemes for Semiconductors Energy-Transport Models, 2D numerical simulation of the MEP energy-transport model with a finite difference scheme, Analysis of numerical schemes for semiconductor energy-transport models, Numerical analysis of DDFV schemes for semiconductors energy-transport models, Energy transport in semiconductor devices, Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models

Cites Work

• Unnamed Item
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• High order conservative difference methods for 2D drift-diffusion model on non-uniform grid
• On the convergence of the Boltzmann equation for semiconductors toward the energy transport model
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• COMPARATIVE STUDIES OF HYDRODYNAMIC AND ENERGY TRANSPORT MODELS
• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• High‐order compact scheme for the steady stream‐function vorticity equations
• On a hierarchy of macroscopic models for semiconductors
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors