Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors

DOI10.1007/BF01181851zbMath0862.65094OpenAlexW2090451400MaRDI QIDQ2564002

Orazio Muscato, Angelo Marcello Anile

Publication date: 25 May 1997

Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/bf01181851

zbMATH Keywords

Monte Carlo simulationsextended thermodynamicscharge transport in semiconductorsBoltzmann's transport equationsilicon semiconductors

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Numerical methods for integral equations (65R20) Integro-partial differential equations (45K05) Technical applications of optics and electromagnetic theory (78A55) Transport processes in time-dependent statistical mechanics (82C70) Motion of charged particles (78A35)

Related Items (6)

Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode ⋮ A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS ⋮ A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices ⋮ The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models ⋮ Kinetic model of thermotransport in semiconductors

Cites Work

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• Field equations for charge conducting fluids in electromagnetic fields
• Method of Lagrange multipliers for exploitation of the entropy principle
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS

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