A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET
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Publication:2581696
DOI10.1016/j.jcp.2005.08.003zbMath1136.82380OpenAlexW2048301530MaRDI QIDQ2581696
Publication date: 10 January 2006
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2005.08.003
Related Items (5)
A conservative multi-group approach to the Boltzmann equations for reactive gas mixtures ⋮ A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs ⋮ A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo ⋮ Adaptive energy discretization of the semiconductor Boltzmann equation ⋮ GaAs-MESFET
Cites Work
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- Deterministic particle simulations of the Boltzmann transport equation of semiconductors
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Efficient implementation of weighted ENO schemes
- Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors
- A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
- A Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InP
- A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
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