A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
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Publication:3618137
DOI10.1007/978-3-540-71992-2_84zbMath1308.82077OpenAlexW2293903961MaRDI QIDQ3618137
Publication date: 31 March 2009
Published in: Progress in Industrial Mathematics at ECMI 2006 (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-540-71992-2_84
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Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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