scientific article; zbMATH DE number 5173858

zbMath1203.82109MaRDI QIDQ5294093

Maria José Cáceres, Chi-Wang Shu, Armando Majorana, José Antonio Carrillo, Irene Martínez Gamba

Publication date: 23 July 2007

Title: zbMATH Open Web Interface contents unavailable due to conflicting licenses.

zbMATH Keywords

weighted essentially non-oscillatory (WENO) schemessemiconductor device simulationdirect simulation Monte Carlo (DSMC)Boltzmann transport equation (BTE)metal oxide semiconductor field effect transistor (MOSFET)metal semiconductor field effect transistor (MESFET)

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Electron optics (78A15)

Related Items (7)

Galerkin methods for Boltzmann-Poisson transport with reflection conditions on rough boundaries ⋮ A numerical solver for a nonlinear Fokker-Planck equation representation of neuronal network dynamics ⋮ A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations ⋮ Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes ⋮ A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices ⋮ Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures ⋮ Positivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equations

Uses Software

• WENO

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