A two-dimensional thin-film transistor simulation using adaptive computing technique
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Cites work
- scientific article; zbMATH DE number 108361 (Why is no real title available?)
- scientific article; zbMATH DE number 625163 (Why is no real title available?)
- scientific article; zbMATH DE number 3215568 (Why is no real title available?)
- A Proof of Convergence of Gummel’s Algorithm for Realistic Device Geometries
- A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
- A new 3D finite element for adaptive h‐refinement in 1‐irregular meshes
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices
- A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems
- Finite volume methods for convection-diffusion problems
- Stability of finite volume approximations for the Laplacian operator on quadrilateral and triangular grids
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