Finite element analysis of semiconductor device equations with heat effect

MaRDI QIDQ2905681zbMATH OpenFDO

Authors Jiang Zhu, Danping Yang, Jiansong Zhang, Xijun Yu

Publication date 28 August 2012

Published in International Journal of Numerical Analysis and Modeling. Series B (Search for Journal in Brave)

zbMATH Keywords

convergence analysisexistence and uniquenessfinite element schemesemiconductor devices with heat effect

Mathematics Subject Classification ID

Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

Review text

The authors consider the bipolar energy balance model for semiconductors which consists of the balance equations for electron and hole densities and the balance equations for the crystal temperature, coupled with the Poisson equation for the electrostatic potential.NEWLINENEWLINESuch a system of PDEs is discretized by a Galerkin method by using mixed finite elements for the electrostatic potential and finite elements for the densities and crystal temperature in the lowest-order Raviart-Thomas space. The existence and uniqueness of the discretized equations is proved using Schauder's fixed point theorem. An analysis of the convergence of the approximate solution to the exact one is given as well.

Recommendations

• scientific article; zbMATH DE number 1782852
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• scientific article; zbMATH DE number 3990810
• Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case
• A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model

Cited in

(6)

• A Numerical Approximation Structured by Mixed Finite Element and Upwind Fractional Step Difference for Semiconductor Device with Heat Conduction and Its Numerical Analysis
• A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids
• scientific article; zbMATH DE number 1866529 (Why is no real title available?)
• Hybrid finite-volume/finite-element schemes for \(p(x)\)-Laplace thermistor models
• Finite element modeling of a microelectronic structure under uniform thermal loading.
• A hybrid mixed finite element method for convection-diffusion-reaction equation with local exponential fitting technique

This page was built for publication: Finite element analysis of semiconductor device equations with heat effect

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2905681)