The surface charging effects in three-dimensional simulation of the profiles of plasma-etched nanostructures

DOI10.1002/JNM.798zbMATH Open1245.78013OpenAlexW2092454948MaRDI QIDQ2889645FDOQ2889645

Authors: M. Radmilović-Radjenović, B. Radjenović, M. Savić 

Publication date: 8 June 2012

Published in: International Journal of Numerical Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.798

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zbMATH Keywords

finite elements methodlevel set methodplasma etchingprofile charging

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of plasmas (82D10) Statistical mechanics of semiconductors (82D37) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)

Cites Work

• Simultaneous potential and circuit solution for 1D bounded plasma particle simulation codes
• Sparse field level set method for non-convex Hamiltonians in 3D plasma etching profile simulations

Cited In (3)

• Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment
• The breakdown voltage characteristics and the secondary electron production in direct current hydrogen discharges for the gaps ranging from \(1 \mu m\) to \(100 \mu \)m
• Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

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